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  1994. 5. 20 1/2 semiconductor technical data KTB989 triple diffused pnp transistor revision no : 0 general purpose application. features  good linearity of h fe .  complementary to ktd1352. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector (heat sink) 3. emitter to-220ab 10.30 max 15.30 max 0.80 3.60 0.20 3.00 6.70 max 13.60 0.50 5.60 max 0.50 1.50 max 2.54 4.70 max 2.60 a b c d e f g h j k l m n o p a e mm 123 f b g h l c k j o n p d 1.37 max 1.50 max r s q c t q1.50 r 9.50 0.20 s 8.00 0.20 t 2.90 max + _ + _ + _ + _ electrical characteristics (ta=25 1 ) note : h fe (1) classification r:40  80 , o:70  140 , y:120  240 characteristic symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -5 v collector current i c -4 a emitter current i e 4 a base current i b -0.4 a collector power dissipation (tc=25 1 ) p c 30 w junction temperature t j 150 1 storage temperature range t stg -55  150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-80v, i e =0 - - -30  a emitter cut-off current i ebo v eb =-5v, i c =0 - - -100  a collector-emitter breakdown voltage v (br)ceo i c =-50ma, i b =0 -80 - - v emitter-base breakdown voltage v (br)ebo i e =-10ma, i c =0 -5.0 - - v dc current gain h fe (1) (note) v ce =-5v, i c =-0.5a 40 - 240 h fe (2) v ce =-5v, i c =-3a 15 - - collector-emitter saturation voltage v ce(sat) i c =-3a, i b =-0.3a - -1.0 -1.7 v base-emitter voltage v be v ce =-5v, i c =-3a - -1.0 -1.5 v transition frequency f t v ce =-5v, i c =-0.5a 3 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 130 - pf
1994. 5. 20 2/2 KTB989 revision no : 0 ce(sat) collector current i (a) v - i collector-emitter saturation c -0.003 -0.01 -0.03 i - v cce ce collector-emitter voltage v (v) 0-1-2-3 -0.8 c 0 collector current i (a) h - i fe c collector current i (a) -0.003 -0.01 300 fe 3 dc current gain h 10 collector current i (a) c -10 -3 collector-emitter voltage v (v) ce safe operating area 10 collector power dissipation pc (w) 0 250 100 50 0 ambient temperature ta ( c) pc - ta -4 -5 -6 -7 -8 -1.6 -2.4 -3.2 -4.0 -4.8 common emitter tc =25 c i =-20ma b -40 -60 -80 -100 -120 -140 -160 -180 0 tc=ta infinite heat sink 300x300x2mm al heat sink 1 2 heat sink 300x300x2mm al heat sink 3 heat sink 200x200x2mm al 100x100x2mm al heat sink 4 heat sink heat sink 5 heat sink 100x100x1mm al heat sink 6 heat sink 100x100x1mm fe heat sink 7 heat sink 50x50x2mm al 50x50x1mm al heat sink 8 heat sink heat sink 9 heat sink 50x50x1mm fe no heat sink 10 150 200 20 30 40 -0.03 -0.1 -0.3 -1 -5 30 50 100 common emitter v =-5v ce tc= 75 c tc=25 c tc=-25 c c voltage v (v) ce(sat) -0.0 3 -0 .1 -0.3 -1 -5 -0.05 -0.1 -0.3 -0.5 -1 -2 common emitter i /i =10 c b tc=75 c tc=25 c tc=-25 c -5 -30 -50 -100 -300 -0.1 -0.3 -0.5 -1 -3 -5 -10 -20 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature i max(pulsed) c i max (continuous) c dc oper at io n (tc=25 c ) v max ceo 1ms 10 0ms 1s 10ms c 1 2 3 4 5 6 7 8 9 10


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